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2010
Journal Article
Titel
Enhancing epitaxial SixC1-x deposition by adding Ge
Abstract
A possible way to enhance the epitaxial growth of metastable, tensile strained SixC1-x layers by the addn. of Ge is demonstrated. During ultra-high vacuum CVD growth, the co-mixing of GeH4 to the SixC1-x precursors was found to enhance the growth rate by a factor of â¼3 compared to the growth of pure SixC1-x. Furthermore, an increase of the amt. of substitutional incorporated C was obsd. Selective SixGeyC1-x-y deposition processes utilizing a cyclic deposition were developed to integrate epitaxial tensile strained layers into source and drain areas of n-channel transistors. [on SciFinder(R)]
Author(s)