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Impact of n-type doping on the terahertz surface emission from c-plane InN

: Polyakov, V.M.; Cimalla, V.; Lebedev, V.; Schwierz, F.


Physica status solidi. A 207 (2010), No.6, pp.1353-1355
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
International Conference on Nitride Semiconductors (ICNS) <8, 2009, Jeju/Korea>
Journal Article, Conference Paper
Fraunhofer IAF ()
InN; Monte Carlo; simulation; Terahertz radiation

We theoretically investigate the influence of n-type doping on the terahertz (THz) electric field emission from unbiased c-plane InN surfaces using the ensemble Monte Carlo (MC) method. It is shown that the increase of n-type doping has twofold effect on the THz surface emission. The detrimental effect of electron drift mobility decrease is compensated by doping-derived electrons constructively contributing to the total dynamic dipole responsible for a generation of the THz electric field pulse emission from InN surface.