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Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2×2 surface

: Lorenz, P.; Gutt, R.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.


Physica status solidi. C 7 (2010), No.7-8, pp.1881-1883
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Conference on Nitride Semiconductors (ICNS) <8, 2009, Jeju/Korea>
Journal Article, Conference Paper
Fraunhofer IAF ()
GaN; ARUPS; XPS; surface state; valence band

GaN(0001)-2×2 surfaces were investigated by angleresolved ultraviolet photoelectron spectroscopy (ARUPS) as well as X-ray photoelectron spectroscopy (XPS). Contamination-and metal-free GaN thin films with a 2×2 reconstruction and a rms roughness below 1 nm were grown on 6H-SiC(0001) by plasma assisted molecular beam epitaxy (PAMBE). The valence band structure of the surface was investigated in-situ with ARUPS along the L -M and I - K directions of the surface Brillouin zone. Weak dispersive surface states related to the unreconstructed GaN surface or to the 2×2 superstructure as well as the dispersion of electron states of the bulk band structure are identified and compared to available results from density functional theory (DFT) calculations [Phys. Rev. B 77, 115120 (2008)] for GaN(0001).