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Determination of the valence band offsets at HfO(2)/InN(0001) and InN/In(0.3)Ga(0.7)N(0001) heterojunctions using X-ray photoelectron spectroscopy

: Eisenhardt, A.; Knübel, A.; Schmidt, R.; Himmerlich, M.; Wagner, J.; Schaefer, J.A.; Krischok, S.


Physica status solidi. A 207 (2010), No.6, pp.1335-1337
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
International Conference on Nitride Semiconductors (ICNS) <8, 2009, Jeju/Korea>
Journal Article, Conference Paper
Fraunhofer IAF ()
III-V nitride heterojunction; band structure; epitaxy; photoelectron spectroscopy

The valence band offset (VBO) at a InN/In(0.3)Ga0.7N(0001) as well as HfO(2)/InN(0001) heterojunction is investigated by X-ray photoelectron spectroscopy using monochromated AlKa radiation. The InN and In(0.3)Ga(0.7)N films were grown using plasma-assisted molecular beam epitaxy, whereas HfO(2) layers were deposited by plasma-assisted electron beam evaporation. The VBOs were determined by analysing the core level binding energy and valence band maxima of bulk-like films as well as of In(0.3)Ga(0.7)N and InN layers covered with 5 nm thick overlayers of InN and HfO(2), respectively. The resulting VBO values are ~0.5 eV for the InN/In(0.3)Ga(0.7)N heterojunction and ~0.9 eV in the case of the HfO(2)/InN heterointerface.