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Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

: Kirste, L.; Lim, T.; Aidam, R.; Müller, S.; Waltereit, P.; Ambacher, O.


Physica status solidi. A 207 (2010), No.6, pp.1338-1341
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer IAF ()
III-V heterostructure; high mobility; interface formation; MBE; structure; transistor

A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al2O3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template.