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1987
Conference Paper
Titel
Simultaneous fabrication of very low resistance ohmic contacts to n-InP and p-InGaAs
Abstract
A process to simultaneously form high-quality ohmic contacts to n-InP and p-InGaAs has been developed. Ti-Au metallization was applied to n-InP following an Ar+-sputter etching treatment and to p-InGaAs after Zn diffusion from doped spin-on glass. Utilizing a selective-wet etching step for the p-type material permits simultaneous fabrication of these contacts with specific contact resistances of well below 1*10-6 Omega cm2.
Language
English
Tags
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diffusion in solids
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etching
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gallium arsenide
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gold
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iii-v semiconductors
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indium compounds
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metallisation
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ohmic contacts
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semiconductor-metal boundaries
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titanium
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zinc
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semiconducting materials
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n-type material
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metallization
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ar+-sputter etching treatment
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diffusion
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doped spin-on glass
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selective-wet etching step
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p-type material
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simultaneous fabrication
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specific contact resistances
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Zn
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Ti-Au-InP
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Ti-Au-InGaAs