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Tunable GaAs-based high power tapered amplifiers in an external cavity setup

: Schilling, C.; Ostendorf, R.; Kaufel, G.; Moritz, R.; Wagner, J.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-:
European Conference on Lasers & Electro-Optics and the 11th European Quantum Electronics Conference, CLEO Europe - EQEC 2009 : 14 - 19 June 2009, Munich
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-4079-5
ISBN: 978-1-4244-4080-1
1 pp.
European Conference on Lasers & Electro-Optics (CLEO Europe) <2009, München>
European Quantum Electronics Conference (EQEC) <11, 2009, München>
Conference Paper
Fraunhofer IAF ()

In this paper, we report on tapered amplifiers based on the GaInAs/AlGaAs-on-GaAs material system, where the active region consists of a 7 nm thick compressively strained InGaAs single quantum well with an indium content of 31%. The devices comprise an index-guided ridge waveguide section acting as a master oscillator which feeds a gain-guided tapered section. A novel split contact design enables us to separately adjust the currents in the ridge- and the taper section. Therefore, a modulation of the output power can be realized by varying the comparatively small ridge current only.