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Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs

: Bach, H.G.; Fiedler, F.; Grote, N.; Bouadma, N.B.; Rose, B.; Devoldere, P.; Tegude, F.J.; Speier, P.; Wunstel, K.

Sixth European Fibre Optic Communications and Local Area Networks Exposition 1988. Papers presented at : June 29 - July 1, 1988 ; Internat. Congr.-Centrum RA Amsterdam, The Netherlands
Boston: IGI Europe, 1988
European Fiber Optic Communications and Local Area Networks Exposition (EFOC LAN) <6, 1988, Amsterdam>
Conference Paper
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; transmitters; monolithic ic; semiinsulating substrates; oeics; optoelectronics; electronic components; optical transmitters; brs-lasers; movpe layers; light sources; heterojunction bipolar transistors; differential amplifier ic; constant current source; InGaAsP-InP; InP substrates

Presents technologies and devices suited for monolithic integration of InP based optoelectronics and electronic components needed in optical transmitters. The authors report on BRS-lasers on semi-insulating InP substrates and BH-lasers regrown with semi-insulating InP MOVPE layers as light sources. Single heterojunction bipolar transistors and a differential amplifier IC with constant current source are fabricated and characterized.