Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Long wavelength infrared GaAs/AlGaAs quantum well infrared photodetectors for 630x512 focal plane array camera systems with 20 mK NETD

GaAs/AlGaAs Quantumwell Infrarot-Photodetektoren mit 20mK Temperaturauflösung für Wärmebildkameras mit 640x512 Bildpunkten
 
: Walther, M.; Fleißner, J.; Schneider, H.; Schönbein, C.; Pletschen, W.; Diwo, E.; Schwarz, K.; Braunstein, J.; Koidl, P.; Ziegler, J.; Cabanski, W.

Ploog, K.H.; Tränkle, G.; Weimann, G.:
Compound Semiconductors 1999. Proceedings of the 26th International Symposium on Compound Semiconductors : Berlin, Germany, 22 - 26 August 1999
Bristol: IOP Publishing, 2000 (Institute of Physics - Conference Series 166)
ISBN: 0-7503-0704-8
pp.427-430
International Symposium on Compound Semiconductors (ISCS) <26, 1999, Berlin>
English
Conference Paper
Fraunhofer IAF ()
quantum well infrared photodetector; Qwip; GaAs/AlGaAs; thermal imaging; Wärmebildkamera; long wavelength infrared camera; Infrarotkamera

Abstract
Photoconductive GaAs/AlGaAs quantum well infrared photodetectors are investigated for the fabrication of IR cameras for thermal imaging in the third atmospheric window. The long wavelength infrared camera consists of a two-dimensional focal-plane array with 640 x 512 detector elements which is flip-chip bonded to a read-out integrated circuit. The technology for the fabrication of the focal-plane arrays, electrical and optical properties of single detector elements in the two-dimensional arrangement and the properties of the camera system are reported. The camera shows excellent spatial resolution with a noise equivalent temperature difference below 20 mK at an operation temperature of T = 60 K.

: http://publica.fraunhofer.de/documents/N-1388.html