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Butt coupled photodiodes integrated with Y-branched optical waveguides on InP

: Döldissen, W.; Fiedler, F.; Kaiser, R.; Mörl, L.


Electronics Letters 25 (1989), No.1, pp.35-37
ISSN: 0013-5194
Journal Article
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; optical communication equipment; optical waveguides; photodiodes; semiconductor technology; substrates; butt coupled photodiodes; photodiodes integration to waveguides; oeics; semiconductors; y-branched optical waveguides; optical y-branch; photodetective zone; GaInAs lpe growth refilling deep etched holes; internal quantum efficiency; dark currents; bias voltage; 90 percent; 1.55 micron; 1 na; -10 v; GaInAs photodiodes; InP substrate

A pair of GaInAs photodiodes was integrated to the output waveguides of an optical Y-branch. Light was butt coupled to the photodetective zone which was formed by GaInAs LPE growth refilling deep etched holes. Total light conversion with more than 90% internal quantum efficiency at 1.55 mu m wavelength was achieved. The best diodes exhibited dark currents of 1 nA at -10 V bias voltage.