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Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors

: Bach, H.G.; Grote, N.; Fiedler, F.

Soncini, G.:
Solid State Devices. Proceedings of the 17. European Solid State Device Research Conference, ESSDERC '87 : Bologna, Italy, 14-17 September 1987
Amsterdam: North-Holland, 1988
ISBN: 0-444-70477-9
European Solid State Device Research Conference (ESSDERC) <17, 1987, Bologna>
Conference Paper
Fraunhofer HHI ()
driver circuits; gallium arsenide; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; integrated optoelectronics; liquid phase epitaxial growth; optical communication equipment; semiconductor device models; semiconductor technology; current injection analysis; model; invertible transistors; oeic; semiconductors; forward current gain; double-heterostructure bipolar transistors; dhbt; laser driver applications; reverse current gain; forward i-v curves; test-diodes; injecting heterojunctions; current blocking InP homojunction diode; lpe methods; step cooling; two-phase solution technique; static performance; InGaAsP-InP

High-gain invertible double-heterostructure bipolar transistors (DHBT) aimed at laser driver applications have been fabricated on the InGaAsP/InP material system. Forward and reverse current gain evaluation was supported by analyses of forward I-V curves of test-diodes representing the injecting heterojunctions and a current blocking InP homojunction diode. The influence of different LPE methods (step cooling, two-phase solution technique) on the static performance of the DHBTs was studied.