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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Very high purity InP layers grown by adduct-MOVPE
Abstract
Using the adduct compound trimethylindium-trimethylphosphine (TMIn-TMP) very high purity InP layers have been grown by atmospheric pressure MOVPE (AP-MOVPE). Residual electron concentrations of less than 4*1014 cm-3 and mobilities of up to 149000 cm2/V.s at 77 K have been obtained.