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Very high purity InP layers grown by adduct-MOVPE

: Wolfram, P.; Reier, F.W.; Franke, D.; Schumann, H.

Journal of Crystal Growth 96 (1989), No.3, pp.691-2
ISSN: 0022-0248
Journal Article
Fraunhofer HHI ()
carrier density; carrier mobility; electronic conduction in crystalline semiconductor thin films; iii-v semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; residual electron concentrations; iii-v semiconductor; adduct-movpe; trimethylindium-trimethylphosphine; atmospheric pressure movpe; mobilities; very high purity InP layers

Using the adduct compound trimethylindium-trimethylphosphine (TMIn-TMP) very high purity InP layers have been grown by atmospheric pressure MOVPE (AP-MOVPE). Residual electron concentrations of less than 4*1014 cm-3 and mobilities of up to 149000 cm2/V.s at 77 K have been obtained.