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Quality and applications of In(Ga)AlAs-layers

: Schramm, C.; Kunzel, H.; Bornholdt, C.; Su, L.M.; Wehmann, H.H.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
Conference Paper
Fraunhofer HHI ()
aluminium compounds; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; optical waveguides; schottky effect; schottky gate field effect transistors; semiconductor growth; mbe growth; mesfet; double heterostructure bipolar transistors; integrated optoelectronic devices; surface quality; schottky contacts; electrical measurements; rib waveguide devices; ingaalas material system; inalas

In the last few years the InGaAlAs material system has received increasing interest for application in integrated optoelectronic devices. The authors present an analysis of layer and surface quality of MBE-grown InAlAs material, a systematic improvement of Schottky contacts characterized by electrical measurements and finally, the fabrication of MeSFET (Metal Semiconductor Field Effect Transistors), DHBT (Double Heterostructure Bipolar Transistors) and rib waveguide devices.