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1989
Conference Paper
Titel
Quality and applications of In(Ga)AlAs-layers
Abstract
In the last few years the InGaAlAs material system has received increasing interest for application in integrated optoelectronic devices. The authors present an analysis of layer and surface quality of MBE-grown InAlAs material, a systematic improvement of Schottky contacts characterized by electrical measurements and finally, the fabrication of MeSFET (Metal Semiconductor Field Effect Transistors), DHBT (Double Heterostructure Bipolar Transistors) and rib waveguide devices.
Language
English
Tags
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aluminium compounds
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heterojunction bipolar transistors
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iii-v semiconductors
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indium compounds
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molecular beam epitaxial growth
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optical waveguides
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schottky effect
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schottky gate field effect transistors
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semiconductor growth
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mbe growth
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mesfet
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double heterostructure bipolar transistors
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integrated optoelectronic devices
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surface quality
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schottky contacts
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electrical measurements
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rib waveguide devices
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ingaalas material system
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inalas