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Assessment of semi-insulating InP:Fe layers for substrate applications

 
: Grote, N.; Bach, H.G.; Feifel, T.; Franke, D.; Harde, P.; Sartorious, B.; Wolfram, P.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
English
Conference Paper
Fraunhofer HHI ()
electronic conduction in crystalline semiconductor thin films; iii-v semiconductors; indium compounds; iron; semiconductor epitaxial layers; substrates; iii-v semiconductor; epitaxial layers; controllable dopant level; substrate applications; epi-substrates; defect densities; specific resistivities; inp:fe semiinsulating layers

Abstract
Semi-insulating InP epi-substrates formed by epitaxial InP:Fe layers on suitable base substrates are proposed and investigated. Compared to standard commercial s.i. bulk substrates, such epi-substrates offer lower defect densities, well-controllable Fe-levels and considerably higher specific resistivities.

: http://publica.fraunhofer.de/documents/N-13802.html