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1989
Conference Paper
Titel
Capacitance-voltage investigations of rechargeable traps in isotype laser heterojunctions
Abstract
A new analytical C-V modelling procedure is presented which comprises deep level recharging processes at the isotype Pp heterojunction in conventional PpN DH laser structures. Experimental results on AlGaAs laser diodes can be explained by this approach.
Language
English
Tags
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aluminium compounds
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capacitance
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deep levels
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gallium arsenide
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iii-v semiconductors
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interface electron states
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semiconductor device models
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semiconductor junction lasers
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isotype p-p heterojunction
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p-p-n DH laser structures
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rechargeable traps
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isotype laser heterojunctions
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analytical C-V modelling
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deep level recharging processes
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algaas laser diodes