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Capacitance-voltage investigations of rechargeable traps in isotype laser heterojunctions

: Bach, H.-G.; Beister, G.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
Conference Paper
Fraunhofer HHI ()
aluminium compounds; capacitance; deep levels; gallium arsenide; iii-v semiconductors; interface electron states; semiconductor device models; semiconductor junction lasers; isotype p-p heterojunction; p-p-n DH laser structures; rechargeable traps; isotype laser heterojunctions; analytical C-V modelling; deep level recharging processes; algaas laser diodes

A new analytical C-V modelling procedure is presented which comprises deep level recharging processes at the isotype Pp heterojunction in conventional PpN DH laser structures. Experimental results on AlGaAs laser diodes can be explained by this approach.