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Implanted-collector InGaAsP/InP heterojunction bipolar transistor

: Su, L.M.; Grote, N.; Schumacher, P.; Franke, D.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
Conference Paper
Fraunhofer HHI ()
gallium arsenide; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; ion implantation; semiconductors; implanted collector; large area devices; hbt; embedded collectors; heterojunction bipolar transistor; high-frequency; reduction of parasitic time constants; structural feature; static i/v characteristics; current gain; emitter-collector breakdown voltages; 3 to 6 v; InGaAsP-InP

A novel structure for an InP-based heterojunction bipolar transistor is proposed and demonstrated which not only provides technological advantages over conventional structures but is also particularly suited for high-frequency applications due to the inherent reduction of parasitic time constants. The main structural feature of this transistor is an embedded rather than a mesa type collector which was created by ion implantation. Large-area devices showed well-behaved static I/V characteristics with a current gain of 250 and emitter-collector breakdown voltages between 3 V and 6 V.