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Optical travelling wave amplifiers with multi-section semiconductor-laser structures



Electronics Letters 26 (1990), No.20, pp.1704-5
ISSN: 0013-5194
Journal Article
Fraunhofer HHI ()
semiconductor junction lasers; optical travelling wave amplifiers; multi-section semiconductor-laser structures; single-section devices; gain sections; absorber section; saturation behaviour; four-wave mixing; crosstalk

Optical travelling wave amplifiers based on multi-section semiconductor laser structures are better adjustable to various applications than conventional single-section devices. The authors present experiments with a two-section TWA (TS-TWA), consisting of two gain sections separated by an absorber section. The experiments deal with the saturation behaviour of the device and with four-wave mixing (FWM) effects. The results show that crosstalk can be significantly reduced by use of MS-TWAS.