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Characteristics of 1.5 µm InGaAs/InGaAsP MQW lasers

 

Schwaderer, B. ; Informationstechnische Gesellschaft -ITG-:
Heterostruktur-Bauelemente : Vorträge der ITG-Fachtagung vom 25. bis 27. April 1990 in Schwäbisch Gmünd
Berlin: VDE-Verlag, 1990 (ITG-Fachbericht 112)
ISBN: 3-8007-1690-9
pp.25-30
Informationstechnische Gesellschaft (Fachtagung) <1990, Schwäbisch Gmünd>
English
Conference Paper
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; semiconductor junction lasers; broad area lasers; semiconductors; long-wave mqw lasers; ridge-guide principle; mqw separate confinement lasers; threshold current; 1.23 to 1.55 micron; InGaAs-InGaAsp multiquantum well lasers; inasp-InP double heterostructure

Abstract
The paper discusses long-wave MQW lasers for emissions in the range of 1.23 to 1.55 µm which have been produced as conventional InAsP/InP double heterostructures and the reasons for their relatively limited performance. The authors describe the technology of an alternative structure in which the InGaAs quantum wells are embedded in a InGaAsP material. Broad-area lasers using the ridge-guide principle are made and tested. The MQW separate confinement lasers have threshold current of 450 and 610 A/cm2 for 4 and 8 wells respectively, notably less than those of the best conventional heterostructures.

: http://publica.fraunhofer.de/documents/N-13784.html