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Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As



Applied physics. A 51 (1990), No.6, pp.508-514
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
Journal Article
Fraunhofer HHI ()
diffusion in solids; doping profiles; gallium arsenide; iii-v semiconductors; indium compounds; manganese; semiconductor doping; semiconductor epitaxial layers; semiconductor; acceptor doping; buffer layers; p+-n-p- layer structure; mbe grown; optoelectronic device structures; contact layers; activation energy; degree of ionization; free-hole concentration; heterointerface; diffusion; junction field effect transistor applications; degraded device characteristics; ga0.47in0.53as; inp:fe substrates; GaInAs:mn; GaInAs-InP

Acceptor doping of MBE grown Ga0.47In0.53As on InP:Fe substrates utilizing manganese is investigated as an alternative for overcoming problems related to beryllium doping. The incorporation behaviour of manganese is analyzed in detail with respect to its application in optoelectronic device structures. Special emphasis is put on low-level and maximum-level doping relevant for use in buffer and contact layers, respectively. The dependence of activation energy and the degree of ionization on acceptor concentration is determined. At high doping levels the free-hole concentration is markedly lower than the doping concentration. It is attributed to the diffusion of acceptor species across the heterointerface in the substrate. Manganese diffusion is demonstrated to be an important effect for the interpretation of the measured results. Manganese doping is applied in p+/n/p--layer structures for junction field effect transistor applications. The intended abruptness of acceptor profiles is deteriorated by diffusion of manganese in the Ga0.47In0.53As material. The degraded device characteristics obtained are attributed to the acceptor diffusion behaviour established.