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Optical thickness mapping of InGaAsP/InP layers



Journal of applied physics 69 (1991), No.2, pp.1110-12
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; light transmission; semiconductor epitaxial layers; thickness measurement; optical thickness mapping; movpe; two-wavelengths transmission method; epitaxial layers; resolution; measuring speed; imagelike presentation; thickness inhomogeneities; calibration scheme; quantitative thickness measurements; buried layers; heterostructure; InGaAsP-InP layers; InP substrate

A two-wavelengths transmission method is presented for measuring the thickness of epitaxial layers with a resolution of better than 10 nm. The measuring speed is high which for the first time makes possible an imagelike presentation of thickness inhomogeneities in layers. A calibration scheme is described which allows quantitative thickness measurements. By the example of measuring buried layers inside a heterostructure the versatile use of the method is demonstrated.