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Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE



Journal of Crystal Growth 107 (1991), No.1-4, pp.802-805
ISSN: 0022-0248
International Conference on Metalorganic Vapor Phase Epitaxy <5, 1990, Aachen>
Workshop on MOMBE, CBE, GSMBE, and Related Techniques <1990, Aachen>
Conference Paper, Journal Article
Fraunhofer HHI ()
gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; infrared spectra of inorganic solids; luminescence of inorganic solids; optical workshop techniques; photoluminescence; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; diode lasers; photoluminescence spectra; mqw structures; low-pressure movpe; quantum wells; gain spectra; threshold current densities; temperature behaviour; broad area lasers; cavity lengths; 1.55 micron; InGaAs-InGaAsp

InGaAs/InGaAsP MQW SC lasers for 1.55 mu m emission wavelength with different numbers of quantum wells have been fabricated using low-pressure MOVPE. Photoluminescence and gain spectra and threshold current densities and the temperature behaviour T0 of broad area lasers at varying cavity lengths have been investigated.