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LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
The growth of wide-gap (lambda g<1.2 mu m) InGaAsP/InP layers using low-pressure MOVPE was investigated. A major problem encountered at standard growth conditions was the occurrence of a vertical concentration gradient of arsenic and phosphorus near the heterointerface becoming particularly pronounced at low AsH3 mass flows. The use of a thick (>1 mu m) InP buffer layer, i.e. a sufficiently long In-P predeposition period, was found to represent a convenient solution to this problem.