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An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs

 
: Su, L.M.; Kunzel, H.; Bach, H.G.; Schlaak, W.; Grote, N.

Singer, K.E.:
Gallium arsenide and related compounds 1990. Proceedings
Bristol, 1991 (Institute of Physics - Conference Series 112)
ISBN: 0-85498-048-2
International Symposium on Gallium Arsenide and Related Compounds <17, 1990, Jersey>
English
Conference Paper
Fraunhofer HHI ()
aluminium compounds; bipolar integrated circuits; driver circuits; gallium arsenide; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; laser accessories; semiconductor junction lasers; semiconductor; integrated laser driver circuit; implanted collector; fabrication; performance; resistor; current modulation capability; transconductance; InGaAs-InAlAs

Abstract
The fabrication and performance of an InP-based differential-amplifier type integrated laser driver circuit incorporating three implanted-collector heterojunction bipolar transistors and a resistor is described. The integrated circuit exhibits a current modulation capability of 4 Gbit/s and a transconductance of around 30 mS.

: http://publica.fraunhofer.de/documents/N-13739.html