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MBE overgrowth of implanted regions in InP:Fe substrates

 
: Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.

:

Journal of Crystal Growth 111 (1991), No.1-4, pp.461-465
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <6, 1990, La Jolla/Calif.>
English
Conference Paper, Journal Article
Fraunhofer HHI ()
annealing; gallium arsenide; heterojunction bipolar transistors; iii-v semiconductors; incoherent light annealing; indium compounds; ion implantation; iron; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; substrates; ion doses; ion energies; MBE overgrowth; implanted regions; annealing conditions; MBE growth chamber; rapid thermal annealing; high temperature annealing; substrate crystal; high-quality overgrowth; RHEED; x-ray diffractometry; implanted overgrown collector; 500 to 750 degc; 100 to 700 kev; InP:Fe substrates; InGaAs layers; implanted InP:Fe,Si; Ph2-H2; H2

Abstract
The MBE growth of InGaAs layers on Si-implanted InP:Fe substrates was investigated. Ion doses and energies used were in the range of 5*1012-5*1014 cm-2 and 100-700 keV, respectively. Among the different annealing conditions tested, i.e. in-situ annealing in the MBE growth chamber at 500 degrees C, rapid thermal annealing at 650 degrees C, and high temperature annealing at 750 degrees C under PH3/H2 partial pressure, only the latter method was found to ensure restoration of the substrate crystal and high-quality overgrowth as assessed by RHEED and X-ray diffractometry. Heterojunction bipolar transistors employing an implanted overgrown collector was successfully fabricated.

: http://publica.fraunhofer.de/documents/N-13730.html