MBE overgrowth of implanted regions in InP:Fe substrates

The MBE growth of InGaAs layers on Si-implanted InP:Fe substrates was investigated. Ion doses and energies used were in the range of 5*1012-5*1014 cm-2 and 100-700 keV, respectively. Among the different annealing conditions tested, i.e. in-situ annealing in the MBE growth chamber at 500 degrees C, rapid thermal annealing at 650 degrees C, and high temperature annealing at 750 degrees C under PH3/H2 partial pressure, only the latter method was found to ensure restoration of the substrate crystal and high-quality overgrowth as assessed by RHEED and X-ray diffractometry. Heterojunction bipolar transistors employing an implanted overgrown collector was successfully fabricated.