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Two-wavelength transmission: A rapid and precise method for measuring the light absorption in semiconductors

 
: Sartorius, B.; Brandstattner, M.; Venghaus, H.

:

Applied surface science 50 (1991), No.1-4, pp.369-372
ISSN: 0169-4332
Symposium D on Analytical Techniques for the Characterization of Compound Semiconductors <1990, Strasbourg>
European Materials Research Society (Fall Conference) <1990, Strasbourg>
English
Conference Paper, Journal Article
Fraunhofer HHI ()
gallium arsenide; iii-v semiconductors; indium compounds; iron; optical constants; point defects; reflectivity; reflection losses; light absorption; two-wavelength transmission; scattering losses; el2; GaAs; inp:fe; inGaAsp-InP

Abstract
By means of two-wavelength transmission the reflection and scattering losses at surfaces are cancelled out experimentally. A signal which is directly proportional to the light absorption is derived and measured in real time. The performance of the method for measuring the concentrations of EL2 in GaAs, of Fe in InP and of the thicknesses of InGaAsP/InP layers is demonstrated.

: http://publica.fraunhofer.de/documents/N-13726.html