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Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration



Journal of Crystal Growth 111 (1991), No.1-4, pp.1084-1088
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <6, 1990, La Jolla/Calif.>
Conference Paper, Journal Article
Fraunhofer HHI ()
carrier density; gallium arsenide; iii-v semiconductors; indium compounds; integrated optoelectronics; junction gate field effect transistors; molecular beam epitaxial growth; optical communication equipment; optical waveguides; p-i-n diodes; photodiodes; semiconductor growth; iii-v semiconductor; lpe; movpe; optoelectronic devices; hybridly grown waveguide structure; waveguide/pin/jfet integration; mbe grown layer sequence; optical waveguide; pin photodiode; junction field effect transistor; monolithical integrated receiver chip; residual carrier density; thick buffer layer; gate contact layer; acceptor diffusion behaviour; optimum crystallinity; donor accumulation; waveguide layer; resistivity; growth temperatures; device isolation; ga0.47in0.53as; algainas

The critical issues for the optimization of the MBE grown layer sequence for the integration of an optical waveguide, a PIN photodiode and a junction field effect transistor (JFET) to form a monolithical integrated receiver chip are discussed. For the JFET layer sequence low residual carrier density of the thick buffer layer has been successfully achieved. The growth of a p+/p++ gate contact layer with minimized acceptor diffusion behaviour is described. For the hybridly grown MOVPE(LPE) GaInAsP/MBE GaInAs PIN/waveguide structure optimum crystallinity is achieved; however, donor accumulation at the interface is detected. MBE grown AlGaInAs as an alternative for the waveguide layer has been investigated. Due to its high resistivity at growth temperatures below 500 degrees C device isolation can be achieved.