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The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers

 
: Sartorius, B.; Reier, F.; Wolfram, P.

:

Materials Science and Engineering, B. Solid state materials for advanced technology 9 (1991), No.1-3, pp.109-113
ISSN: 0921-5107
European Materials Research Society (Fall Meeting) <1990, Strasbourg>
English
Conference Paper, Journal Article
Fraunhofer HHI ()
dislocations; gallium arsenide; heat treatment; iii-v semiconductors; indium compounds; optical microscopy; semiconductor epitaxial layers; semiconductors; thermal degradation; quality; defects; epitaxial layers; layer quality; InGaAsP-InP

Abstract
Thermal degradation is identified as the origin for a variety of defects in epitaxial layers. The consequences of these defects are more critical than those of dislocations. It turns out that thermal degradation affects the layer quality more than dislocations.

: http://publica.fraunhofer.de/documents/N-13722.html