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1991
Journal Article
Title
Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
Abstract
An analysis of the threshold behavior of long-wavelength ( lambda =1.55 mu m) multiquantum well separate-confinement lasers with InGaAs wells and quaternary ( lambda g=1.3 mu m) barriers is presented. Using the effective mass approximation and Fermi statistics for carriers, an approximately logarithmic dependence of optical gain on carrier density for quantum well lasers with one confined electron state is predicted theoretically. This prediction is verified by measured threshold currents of broad-area lasers of various cavity lengths and different numbers of quantum wells. Moreover, the characteristic parameters, such as transparency current density, gain constant, and absorption outside the active region, are determined.
Keyword(s)
carrier density
gallium arsenide
gallium compounds
iii-v semiconductors
indium compounds
laser transitions
semiconductor junction lasers
semiconductor quantum wells
long-wavelength
InGaAs wells
effective mass approximation
fermi statistics
logarithmic dependence
optical gain
quantum well lasers
one confined electron state
threshold currents
broad-area lasers
cavity lengths
characteristic parameters
transparency current density
gain constant
absorption
active region
1.55 micron
InGaAs-InGaAsp multiquantum well separate confinement lasers