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Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure

 

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Microelectronic engineering 15 (1991), No.1-4, pp.149-152
ISSN: 0167-9317
European Solid State Device Research Conference <21, 1991, Montreux>
English
Conference Paper, Journal Article
Fraunhofer HHI ()
diffusion in solids; gallium arsenide; heterojunction bipolar transistors; iii-v semiconductors; indium compounds; semiconductor device models; semiconductor growth; vapour phase epitaxial growth; dhbt structure; diffusion model; sims; simulation; semiconductors; double heterostructure bipolar transistor; doping profiles; InP-InGaAs-InP structure; inp:zn

Abstract
A model is developed describing Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor (DHBT) structure. This model is used for the design of the highly p-doped base layer. Experimental results confirm the calculated doping profiles.

: http://publica.fraunhofer.de/documents/N-13698.html