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Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE

: Kunzel, H.; Passenberg, W.; Bottcher, J.; Heedt, C.


Microelectronic engineering 15 (1991), No.1-4, pp.569-572
ISSN: 0167-9317
European Solid State Device Research Conference <21, 1991, Montreux>
Conference Paper, Journal Article
Fraunhofer HHI ()
aluminium compounds; electronic conduction in crystalline semiconductor thin films; gallium arsenide; high electron mobility transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; schottky effect; semiconductor growth; growth temperature optimisation; AlInAs growth temperature; mbe; material characteristics; surface morphology; specific resistivity; doping; schottky contact behaviour; HEMT structures; 1 micron; AlInAs-GaInAs

The material characteristics of MBE grown AlInAs layers relevant to AlInAs/InGaAs HEMTs, such as surface morphology, specific resistivity, doping and Schottky contact behaviour, have been investigated for dependence of the growth temperature. Respective optimum results were obtained at different temperatures which were adopted for the growth of HEMT structures. Preliminary results on 1 mu m gate length devices are presented.