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1992
Journal Article
Titel
Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides
Abstract
The MBE growth of In0.52Ga0.18Al0.30As ( lambda g=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda =1.55 mu m but concomitantly high resistivity of >104 Omega cm. The refractive index of In0.52Ga0.18Al0.30As was estimated to be 3.207+or-0.03 at lambda =1.55 mu m.
Tags
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aluminium compounds
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gallium compounds
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iii-v semiconductors
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indium compounds
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integrated optics
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molecular beam epitaxial growth
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optical waveguides
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refractive index
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semiconductor epitaxial layers
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rib waveguides
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mbe growth
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temperature range
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propagation losses
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resistivity
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1.06 micron
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1.55 micron
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400 to 450 c
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1e4 ohmcm
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in0.52ga0.18al0.30as-InP
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InP substrate