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MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers

 
: Passenberg, W.; Bach, H.G.; Bottcher, J.

:

Riley, T.:
Third International Conference Indium Phosphide and Related Materials : April 8 - 11, 1991, Park Hotel, Cardiff, Wales, UK
New York, NY: IEEE, 1991
ISBN: 0-87942-626-8
ISBN: 0-87942-627-6
ISBN: 0-87942-628-4
pp.484-487
International Conference Indium Phosphide and Related Materials <3, 1991, Cardiff>
English
Conference Paper
Fraunhofer HHI ()
gallium arsenide; hall effect; high electron mobility transistors; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; semiconductors; single delta -doped channels; HEMT; MBE growth; electrical behavior; c-v characterization; delta-doped InGaAs channel layers; sheet carrier concentrations; carrier transport; double delta -doped channels; sheet resistance; InGaAs:Si

Abstract
The molecular beam epitaxial growth of Si delta -doped donor planes within InGaAs layers is described. The results of Hall and C-V characterization measurements of single and double delta -doped InGaAs channel layers are presented. It is shown that high sheet carrier concentrations approaching 3.8*1013 cm-2 can be achieved. Improved carrier transport in double delta -doped channels for FET applications is proposed and experimentally confirmed by decreased sheet resistance values obtained from double delta -doped structures.

: http://publica.fraunhofer.de/documents/N-13668.html