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1992
Journal Article
Titel
Pseudomorphic GaxIn1-xAs on InP for HEMT structures grown by MBE
Abstract
Material characteristics of strained MBE GaInAs layers on InP have been investigated in relation to the In-content. Pseudomorphic AlInAs/GaInAs HEMT structures are grown and characterized by systematically increasing the In-content of the channel layer. Preliminary results on 0.25 mu m gate length devices are presented.
Tags
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aluminium compounds
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gallium arsenide
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high electron mobility transistors
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iii-v semiconductors
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indium compounds
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molecular beam epitaxial growth
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semiconductor growth
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solid-state microwave devices
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pseudomorphic HEMT
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mbe growth
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high frequency performance
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HEMT structures
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in-content
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channel layer
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gate length
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0.25 micron
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inp
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AlInAs-GaInAs