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1992
Journal Article
Titel
MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Abstract
The authors report on MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices, which require abrupt compositional and doping interfaces. Strongly coupled InGaAs/InP Wannier superlattices with a large number of periods show excellent photoluminescence quality and surface morphology. In addition, band-filling effects with very low leakage current density are demonstrated by incorporating InAlAs barrier layers into InGaAsP/InP modulation doped electron transfer structures.
Tags
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aluminium compounds
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electro-optical devices
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gallium arsenide
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gallium compounds
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iii-v semiconductors
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indium compounds
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luminescence of inorganic solids
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photoluminescence
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semiconductor growth
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semiconductor quantum wells
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surface structure
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vapour phase epitaxial growth
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metalorganic vapour phase epitaxial growth
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compositional interfaces
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characterization
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electro-optic switching devices
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doping interfaces
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inGaAs/InP wannier superlattices
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photoluminescence quality
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surface morphology
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band-filling effects
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leakage current density
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inalas barrier layers
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inGaAsp/InP modulation doped electron transfer structures
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inGaAsp-InP-inalas multiquantum well structures
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inGaAs-in(GaAs)p multiquantum well structures
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inGaAsp-in(GaAs)p
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inGaAsp-InP-inalas