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MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices

 

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Journal of Crystal Growth 124 (1992), No.1-4, pp.610-615
ISSN: 0022-0248
International Conference on Metalorganic Vapor Phase Epitaxy <6, 1992, Cambridge/Mass.>
English
Conference Paper, Journal Article
Fraunhofer HHI ()
aluminium compounds; electro-optical devices; gallium arsenide; gallium compounds; iii-v semiconductors; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor quantum wells; surface structure; vapour phase epitaxial growth; metalorganic vapour phase epitaxial growth; compositional interfaces; characterization; electro-optic switching devices; doping interfaces; inGaAs/InP wannier superlattices; photoluminescence quality; surface morphology; band-filling effects; leakage current density; inalas barrier layers; inGaAsp/InP modulation doped electron transfer structures; inGaAsp-InP-inalas multiquantum well structures; inGaAs-in(GaAs)p multiquantum well structures; inGaAsp-in(GaAs)p; inGaAsp-InP-inalas

Abstract
The authors report on MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices, which require abrupt compositional and doping interfaces. Strongly coupled InGaAs/InP Wannier superlattices with a large number of periods show excellent photoluminescence quality and surface morphology. In addition, band-filling effects with very low leakage current density are demonstrated by incorporating InAlAs barrier layers into InGaAsP/InP modulation doped electron transfer structures.

: http://publica.fraunhofer.de/documents/N-13635.html