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1991
Conference Paper
Titel
Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Abstract
The authors demonstrate for the first time electro-optic modulation due to voltage controlled phase space filling by electron transfer in modulation doped MOVPE grown InGaAsP/InP multiple quantum well structures.
Language
English
Tags
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electro-optical devices
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gallium arsenide
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gallium compound
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iii-v semiconductor
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indium compounds
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integrated optic
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optical modulation
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semiconductor growth
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semiconductor quantum wells
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vapour phase epitaxial growth
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mqw semiconductor
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sq well
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optical switch
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electron transfer
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movpe grown
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multiple quantum well structure
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electro-optic modulation
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voltage controlled phase space filling
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modulation doped
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InGaAsP-InP