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Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Doping properties of undoped and Zn-doped In(Ga)AlAs layers grown lattice-matched on InP by low-pressure metalorganic vapour phase epitaxy (MOVPE) were investigated. In non-intentionally doped InAlAs, oxygen proves to be the dominant impurity the incorporation of which was, however, found to strongly depend on the V/III ratio. Background doping levels as low as 2*1015 cm-3 were achieved in these layers. Zn-doping in InAlAs is incorporation-limited to a level of about 3*1018 cm-3, but increases with decreasing Al content in InGaAlAs. The diffusivity of Zn during growth appears to be favourably lower in InAlAs as compared to InP. Finally, the well-known effect of acceptor passivation was not encountered with the present MOVPE conditions.