Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. Improvement of 48 nm TANOS NAND cell performance by introduction of a removable encapsulation liner
:
Beug, M.F.; Melde, T.; Paul, J.; Bewersdorff-Sarlette, U.; Czernohorsky, M.; Beyer, V.; Hoffmann, R.; Seidel, K.; Löhr, D.-A.; Bach, L.; Knöfler, R.; Tilke, A.T. | Institute of Electrical and Electronics Engineers -IEEE-:
2009 IEEE International Memory Workshop, IMW '09. Proceedings : Monterey, California, USA, 10 - 14 May 2009
Piscataway, NJ: IEEE, 2009
ISBN: 978-1-424-43762-7
ISBN: 978-1-4244-3761-0
pp.88-89 |
| International Memory Workshop (IMW) <2009, Monterey/Calif.> |
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| English |
| Conference Paper |
| Fraunhofer CNT () |
Abstract
This paper presents charge trapping (CT) cells integrated with a sacrificial liner at the word line (WL) side wall which improves significantly the erase and retention characteristics, currently the main issues in CT memory devices.