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  4. Analysis of TANOS memory cells with sealing oxide containing blocking dielectric
 
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2010
Journal Article
Title

Analysis of TANOS memory cells with sealing oxide containing blocking dielectric

Abstract
In this paper, we investigate the specific impact of an additional silicon oxide layer (sealing oxide) on top of the charge-trap nitride on the electrical performance of small dimension and large TANOS charge-trapping (CT) memory cells. We observe a significant improvement in charge retention on both our target 48-nm NAND TANOS cells and on large 5 µm long and wide memory cells. However, erase performance is partially degraded by this additional silicon dioxide top-dielectric layer. The presented intrinsic CT stack retention for 3.5-nm sealing oxide, which is visible on large cell structures, clearly shows the potential for multilevel cell operation. We further identified trapping in the Al2O3 states of the blocking dielectric to improve the program and erase performance of conventional TANOS memory cells. However, detrapping from these trap states was found to be the root cause of insufficient retention.
Author(s)
Beug, M. Florian
Physikalisch-Technische Bundesanstalt
Melde, Thomas
TU Dresden
Czernohorsky, Malte
TU Dresden
Hoffmann, Raik  
Fraunhofer-Center Nanoelektronische Technologien CNT  
Paul, Jan
TU Dresden
Knöfler, Roman
Tilke, Armin T.
Ludwig Maximilian Universität
Journal
IEEE transactions on electron devices  
DOI
10.1109/TED.2010.2049217
Language
English
CNT  
Keyword(s)
  • charge-trap memory devices

  • NAND flash

  • sealing oxide

  • blocking dielectric

  • non-volatile memory

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