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Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures

 
: Agrawal, N.; Wegener, M.

:

IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Sixth International Conference on Indium Phosphide and Related Materials 1994. Proceedings : March 27 - 31, 1994, Fess Parkers' Red Lion Resort, Santa Barbara, California, USA
Piscataway, NJ: IEEE, 1994
ISBN: 0-7803-1476-X
ISBN: 0-7803-1477-8
ISBN: 0-7803-1478-6
pp.83-86
International Conference on Indium Phosphide and Related Materials (IPRM) <6, 1994, Santa Barbara/Calif.>
English
Conference Paper
Fraunhofer HHI ()
aluminium compounds; electro-optical devices; electroabsorption; electron mobility; gallium arsenide; high-speed optical techniques; iii-v semiconductors; indium compounds; ultrafast electron dynamics; InGaAlAs/InP graded-gap electron transfer optical modulator structures; time constants; high speed applications; electrical behavior; 1 ps; ingaalas-InP

Abstract
We report ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures with time constants on the order of 1 picosecond. This should be compared with the previous best values for the standard electron transfer structures in the range of 17-55 picoseconds. All other properties important for high speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.

: http://publica.fraunhofer.de/documents/N-13527.html