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1994
Conference Paper
Titel
Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures
Abstract
We report ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures with time constants on the order of 1 picosecond. This should be compared with the previous best values for the standard electron transfer structures in the range of 17-55 picoseconds. All other properties important for high speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.
Tags
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aluminium compounds
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electro-optical devices
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electroabsorption
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electron mobility
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gallium arsenide
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high-speed optical techniques
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iii-v semiconductors
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indium compounds
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ultrafast electron dynamics
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InGaAlAs/InP graded-gap electron transfer optical modulator structures
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time constants
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high speed applications
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electrical behavior
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1 ps
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ingaalas-InP