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Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs

 
: Umbach, A.; Schramm, C.; Bottcher, J.; Unterborsch, G.

:

IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Sixth International Conference on Indium Phosphide and Related Materials 1994. Proceedings : March 27 - 31, 1994, Fess Parkers' Red Lion Resort, Santa Barbara, California, USA
Piscataway, NJ: IEEE, 1994
ISBN: 0-7803-1476-X
ISBN: 0-7803-1477-8
ISBN: 0-7803-1478-6
pp.198-201
International Conference on Indium Phosphide and Related Materials (IPRM) <6, 1994, Santa Barbara/Calif.>
English
Conference Paper
Fraunhofer HHI ()
aluminium compounds; gallium arsenide; high electron mobility transistors; iii-v semiconductors; indium compounds; ohmic contacts; semiconductor technology; buried n-GaInAs layers; GaInAs/AlInAs-HEMTs; parasitic elements; gate capacitance; series resistances; fabrication; Si-doped GaInAs cap; AlInAs barrier layer; InP; GaInAs:Si-AlInAs

Abstract
The physical properties of the InP-based GaInAs/AlInAs system allow the fabrication of High-Electron-Mobility-Transistors (HEMTs) with superior device performance. However the full exploitation of material capabilities in such devices demands the reduction of parasitic elements like gate capacitance and series resistances. Their properties are strongly dependent on how the fabrication process is conducted. This paper focuses on the analysis of source and drain ohmic contacts, which have to provide a connection to the buried HEMT channel beneath a Si-doped GaInAs cap and a high bandgap AlInAs barrier layer.

: http://publica.fraunhofer.de/documents/N-13526.html