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Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE

 

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IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
Sixth International Conference on Indium Phosphide and Related Materials 1994. Proceedings : March 27 - 31, 1994, Fess Parkers' Red Lion Resort, Santa Barbara, California, USA
Piscataway, NJ: IEEE, 1994
ISBN: 0-7803-1476-X
ISBN: 0-7803-1477-8
ISBN: 0-7803-1478-6
pp.476-479
International Conference on Indium Phosphide and Related Materials (IPRM) <6, 1994, Santa Barbara/Calif.>
English
Conference Paper
Fraunhofer HHI ()
demodulation; directional couplers; distributed feedback lasers; gallium arsenide; iii-v semiconductors; indium compounds; integrated optoelectronics; laser tuning; optical couplers; optical receivers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; integration; heterodyne receiver; oeic; movpe; selective area epitaxy; tunable buried four-section dbr-laser; butt coupling; directional coupler; semi-insulating strip loaded waveguides; planarity; epitaxial regrowth; laser mesa; coupling efficiencies; optical power; 52 percent; 63 percent; 1 mw; InGaAsP-InP:fe

Abstract
For the first time we present the integration of a tunable buried four-section DBR-laser butt coupled to a directional coupler based on semi-insulating strip loaded (InGaAsP/InP):Fe waveguides by using selective area epitaxy with large mask areas. Good planarity after the epitaxial regrowth of the waveguide layers has been achieved applying a special preparation of the laser mesa. Average coupling efficiencies of 52% and best values of 63% have been realized. The optical power of the guided light at each output port of the coupler exceeds 1 mW.

: http://publica.fraunhofer.de/documents/N-13521.html