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1994
Journal Article
Titel
Ultrafast graded-gap electron transfer optical modulator structure
Abstract
We demonstrate an ultrafast graded-gap electron transfer optical modulator structure with electron escape times on the order of 1 ps. All other aspects important for high-speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.
Tags
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aluminium compounds
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electro-optical devices
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electroabsorption
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gallium arsenide
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iii-v semiconductors
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indium compounds
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optical modulation
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optical waveguides
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ultrafast graded-gap electron transfer optical modulator structure
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electron escape times
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high-speed applications
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electrical behavior
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1 ps
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