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Ultrafast graded-gap electron transfer optical modulator structure

	Applied Physics Letters 65 (1994), No.6, pp.685-7 ISSN: 0003-6951 ISSN: 1077-3118

	English
	Journal Article
	Fraunhofer HHI ()
	aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; iii-v semiconductors; indium compounds; optical modulation; optical waveguides; ultrafast graded-gap electron transfer optical modulator structure; electron escape times; high-speed applications; electrical behavior; 1 ps; ingaalas-InP

Abstract
We demonstrate an ultrafast graded-gap electron transfer optical modulator structure with electron escape times on the order of 1 ps. All other aspects important for high-speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.