Options
1993
Conference Paper
Titel
Quantitative analysis of Be diffusion in delta-doped AlInAs and GaInAs during MBE growth
Abstract
Diffusion of Be acceptors in MBE grown multiple delta-doped AlInAs and GaInAs layers was investigated. Over the investigated concentration range the diffusion coefficient in AlInAs appears to be higher than in GaInAs. In agreement with theory a quadratic relationship with dopant concentration was verified. The temperature dependence in the investigated range from 400 to 530 degrees C can be described by an Arrhenius plot with activation energies of 0.6 eV and 1.1 eV for AlInAs and GaInAs, respectively. The diffusion behaviour appears to be unaffected by the V/III beam equivalent pressure ratio.
Language
English