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InP based InGaAs-JFET with delta-doped channel

 

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
English
Conference Paper
Fraunhofer HHI ()
electrical conductivity; gallium arsenide; iii-v semiconductors; impurity states; indium compounds; interface states; junction gate field effect transistors; InP based InGaAs-jfet; delta -doped channel; electrical measurements; transconductance; gate voltage; transit frequency; oscillation frequency; 39 GHz; 28 GHz; InP-InGaAs

Abstract
An InP based junction field-effect transistor (JFET) employing a double delta-doped InGaAs channel was designed and fabricated. This new combination of delta-doping and InGaAs material properties promises various advantages over delta-doped GaAs-FETs. Electrical measurements on 1 mu m*50 mu m JFETs exhibited a high transconductance of 520 mS/mm being constant over a wide range of gate voltages. A transit frequency and a maximum oscillation frequency of 28 and 39 GHz, respectively, have been obtained.

: http://publica.fraunhofer.de/documents/N-13493.html