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Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching

: Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.

DOI: 10.1109/ICIPRM.1993.380547

	IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society: Fifth International Conference on Indium Phosphide and Related Materials. Proceedings : April 19-22, 1993, Maison de la Chimie, Paris, France Piscataway, NY: IEEE, 1993 ISBN: 0-7803-0993-6 ISBN: 0-7803-0994-4 ISBN: 0-7803-0995-2 pp.703-706
	International Conference on Indium Phosphide and Related Materials (IPRM) <5, 1993, Paris>

	English
	Conference Paper
	Fraunhofer HHI ()
	aluminium compounds; iii-v semiconductors; indium compounds; optical switches; optoelectronic devices; semiconductor doping; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; zinc; highly abrupt modulator; zn doping; acceptor incorporation; lp-movpe grown; quantum well electron transfer structures; optical switching; sharp doping interfaces; long wavelength optoelectronic devices; diffusion effects; bandgap; lattice matched; optimized growth conditions; source materials; multi quantum well structures; InP-inalas:zn

Abstract
Acceptor incorporation with sharp doping interfaces is required for a variety of long wavelength optoelectronic devices. However, relatively strong diffusion effects are observed in the InGaAsP materials especially as the alloy bandgap increases. To overcome this difficulty, the Zn acceptor doping is studied for low pressure metal organic vapor phase epitaxial grown InAlAs lattice matched to InP for applications in electron transfer structures for optical switching. The optimized growth conditions for Zn doping including the effect of source materials are described in detail. Results which demonstrate highly abrupt modulation Zn doping obtained in multi quantum well structures are presented.