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Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Acceptor incorporation with sharp doping interfaces is required for a variety of long wavelength optoelectronic devices. However, relatively strong diffusion effects are observed in the InGaAsP materials especially as the alloy bandgap increases. To overcome this difficulty, the Zn acceptor doping is studied for low pressure metal organic vapor phase epitaxial grown InAlAs lattice matched to InP for applications in electron transfer structures for optical switching. The optimized growth conditions for Zn doping including the effect of source materials are described in detail. Results which demonstrate highly abrupt modulation Zn doping obtained in multi quantum well structures are presented.