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1995
Journal Article
Titel
Semitransparent mask technique for relief type surface topographies
Abstract
Semitransparent mask photolithography can be used for the generation of relief type surfaces with only a single photolithographic exposure. An electron beam lithography process for the fabrication of the photomasks employed in this technique is presented. The influence of electron beam exposure dose, beam size and deflection field size are discussed. Examples of tapered and lens-like relief structures fabricated by semitransparent mask lithography are given.