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Self-consistent calculation of quantum well electron transfer structures for ultrafast optical switches

: Weinert, C.M.; Agrawal, N.

Righini, G.C. ; European Commission, Directorate-General for Science, Research and Development; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.; European Optical Society -EOS-:
Linear and nonlinear integrated optics : 11-13 April, Lindau
Bellingham, Wash.: SPIE, 1994 (SPIE Proceedings Series 2212)
ISBN: 0-8194-1516-2
Conference "Linear and Nonlinear Integrated Optics" <1994, Lindau>
Conference Paper
Fraunhofer HHI ()
electro-optical switches; finite difference methods; gallium arsenide; gallium compounds; high-speed optical techniques; iii-v semiconductors; indium compounds; schrodinger equation; semiconductor quantum wells; semiconductor switches; space charge; self-consistent calculation; quantum well electron transfer structur; ultrafast optical switches; self-consistent finite difference method; simulation; InGaAsP/InP qw structures; fast optical switching devices; simultaneous solution; poisson's equation; continuity equation; schrodinger's equation; discretized mesh; accurate simulation method; arbitrary layer structures; space charge layers; physical parameters; quantum well electron transfer structures; quantum barrier structures; quantum reservior structures; InGaAsP-InP

A self-consistent finite difference method for the simulation of electron transfer structures is developed and applied to optimize InGaAsP/InP QW structures for fast optical switching devices. Simultaneous solution of Poisson's equation, continuity equation and Schrodinger's equation on a discretized mesh yields a fast and accurate simulation method which may be applied to arbitrary layer structures and which needs no artificial assumptions like space charge layers. With this method we calculate the important physical parameters of barrier, reservoir and quantum well electron transfer structures (BRAQWETS).