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Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

: Kunzel, H.; Bottcher, J.; Hase, A.; Hofsass, V.; Kaden, C.; Schweizer, H.


Journal of Crystal Growth 150 (1995), No.1-4, pp.1323-1327
ISSN: 0022-0248
International Conference on Molecular Beam Epitaxy <8, 1994, Osaka>
Conference Paper, Journal Article
Fraunhofer HHI ()
aluminium compounds; distributed feedback lasers; gallium arsenide; iii-v semiconductors; indium compounds; ion implantation; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; growth; lattice-matched alGaInAs/GaInAs multiple quantum well; distributed feedback laser; gratings; planar device integration; local refractive index modification; masked implantation enhanced intermixing; molecular beam epitaxy; mbe overgrowth; h* radical treatment; 1.3 micron; h; alGaInAs-GaInAs

AlGaInAs/GaInAs multiple quantum well (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI). Suitable molecular beam epitaxy (MBE) growth conditions are elaborated to achieve 1.3 mu m AlGaInAs/GaInAs MQW distributed feedback (DFB) lasers taking advantage of the capability of the MIEI process to define the gratings. High-quality MBE overgrowth on AlGaInAs necessary for device completion after H* radical treatment is demonstrated.