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In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth

: Kunzel, H.; Bochnia, R.; Bottcher, J.; Harde, P.; Hase, A.; Griebenow, U.

	Journal of Crystal Growth 150 (1995), No.1-4, P1, pp.18-22 ISSN: 0022-0248
	International Conference on Molecular Beam Epitaxy <8, 1994, Osaka>

	English
	Conference Paper, Journal Article
	Fraunhofer HHI ()
	aluminium compounds; gallium arsenide; iii-v semiconductors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wells; surface cleaning; interface c concentration; molecular beam epitaxy regrowth; processing chamber; native oxide removal; cleaning conditions; regrown GaInAs layers; quality; alGaInAs surfaces; in situ h radical treatment; in situ al0.24ga0.24in0.52as surface cleaning procedure; alGaInAs-GaInAs single quantum well structures

Abstract
In situ hydrogen radical treatment in a processing chamber attached to a molecular beam epitaxy (MBE) system is successfully applied for the native oxide removal from AlGaInAs surfaces exposed to air prior to MBE regrowth. The influence of cleaning conditions is studied on regrown GaInAs layers and AlGaInAs/GaInAs single quantum well (SQW) structures. At optimum cleaning conditions no deterioration of the quality of the treated material appears. In addition, reduction of the interface carbon concentration is achievable.