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A versatile and cryogenic mHEMT-model including noise

: Seelmann-Eggebert, M.; Schäfer, F.; Leuther, A.; Massler, H.


IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2010 : May 23-28, 2010, Anaheim, California
Piscataway/NJ: IEEE, 2010
ISBN: 978-1-4244-6056-4
ISBN: 1-4244-6056-5
ISBN: 978-1-4244-6057-1
ISBN: 978-1-4244-7732-6
International Microwave Symposium (IMS) <2010, Anaheim/Calif.>
Conference Paper
Fraunhofer IAF ()
noise modeling; cryogenic amplifier; HEMT; LNA

A versatile scalable small signal model for high electron mobility transistors (HEMTs) of gate length 50 nm and 100 nm has been developed. The model covers a large bias range and includes the temperature dependence from 300 K to 15 K. Especially, it is capable to predict the noise behaviour of the transistor in dependence of ambient temperature and frequency.